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UltraCMOS™ Process compared to Bulk Silicon CMOS
The UltraCMOS™
silicon-on-sapphire (SOS) process is a patented variation of
silicon-on-insulator (SOI) technology, enabling the combination of
high-performance RF, mixed-signal, passive elements, nonvolatile memory and
digital functions on a single device without blocking capacitors. By utilizing a sapphire substrate, which is a
near-perfect insulator, UltraCMOS wafers enjoy low defect density for simpler
construction; dielectrically isolated transistors for excellent power handling
and multiple thresholds; and inherent CMOS logic levels. Further, fully-depleted SOS doesn’t have any
body junctions, so the only voltage variable capacitance is Cox. UltraCMOS
delivers the fundamental reliability, cost
effectiveness, high yields, scalability and monolithic integration of standard
CMOS, while achieving peak RF performance traditionally expected from the more
exotic process technologies.
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