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NEWSROOM: From the founders of RF SOI


Peregrine Low-Frequency Passive Mixer Targets UHF-900MHz Applications

High linearity, low loss mixer ideal for broadband applications

San Diego, California, June 9, 2009 -- Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced the release of its newest UltraCMOS™ RFIC, the 50-ohm PE4150 quad MOSFET core device, ideal for mixer designs requiring low conversion loss and high linearity such as portable radios operating in bands from UHF through 900MHz. The PE4150 is a highly linear passive mixer that incorporates an integrated LO amplifier with exceptionally high LO isolation. This allows for LO drive levels as low as -10dBm producing IIP3 values typically associated with 15dBm LO drive. The PE4150 operates with differential signals at the RF and IF ports and the integrated LO buffer amplifier drives the mixer core. The device can be used as an up converting or a down converting mixer.

“The PE4150 is a highly linear broadband mixer with low LO drive that can cover multiple bands in portable radios. This single device can operate from UHF through 900MHz eliminating the need to redesign each band,” said Mark Schrepferman, director of communication and industrial products for Peregrine. “The PE4150 has low current drain as well as a 20 µA low current mode to further prolong battery life,” he added.

The PE4150 is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on- insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. The PE4150 mixer, packaged in a 4x4 mm 20-lead QFN, is available in volume and is priced at $5.54 (10K units).

About UltraCMOS Technology

UltraCMOS mixed-signal process technology is a proprietary, patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high-performance wireless applications. The Company’s revolutionary design inventions, such as HaRP™ technology which enables dramatic improvements in harmonic results, linearity and overall RF performance; and DuNE™ technology, the industry’s most advanced digital tuning capability, are paving the way for unprecedented RF IC development. Significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.

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The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS and HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.