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NEWSROOM: From the founders of RF SOI


Peregrine Semiconductor Introduces First RF SOI 300 mm Technology Platform

GLOBALFOUNDRIES and Peregrine Collaborate To Achieve an Industry First with the UltraCMOS® 11 Platform

SAN DIEGO – July 6, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130 nm 300 mm RF technology platform. By moving to a 300 mm wafer, Peregrine opens the door to new enhancements and advanced features in future generations of the UltraCMOS technology platform, which can leverage GLOBALFOUNDRIES’ 300 mm production-proven design enablement and manufacturing expertise and scale.

Peregrine Semiconductor’s UltraCMOS® technology platform now includes 300 mm wafers. Pictured are wafers from the UltraCMOS 11 technology platform (left), UltraCMOS 10 platform and UltraCMOS silicon on sapphire (right).
To develop the next-generation UltraCMOS 11 platform, Peregrine collaborated with tier-one fab GLOBALFOUNDRIES. UltraCMOS 11 technology uses a custom fabrication flow from GLOBALFOUNDRIES' state-of-the-art Fab 7 facility in Singapore.

“As an industry first, the new RF SOI technology reaffirms our commitment to the RF market, and is another example how GLOBALFOUNDRIES’ 300 mm fab in Singapore can provide new levels of performance, reliability and scalability for integrated RF front-end solutions," said Brian Harrison, senior vice president of Integration and Factory Management at GLOBALFOUNDRIES. “We are pleased to see the tremendous efforts resulted in this achievement, and we will continue to leverage our RF process development expertise and manufacturing scale to maximize the technology's capabilities and drive differentiation with our customers."
 
The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the success of the award-wining UltraCMOS 10 technology platform, also developed and manufactured by GLOBALFOUNDRIES, and offers unparalleled performance and cost-competitive advantages. 

“For over 25 years, Peregrine has been at the forefront of advancing RF SOI technology,” said Jim Cable, CEO of Peregrine Semiconductor. “That legacy continues with today’s introduction of the UltraCMOS 11 platform, the first RF SOI 300 mm technology platform. By using 300 mm wafers, Peregrine ensures our technology roadmap will continue to be on the leading edge of RF SOI.”

ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market's biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit http://www.psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.