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NEWSROOM: From the founders of RF SOI


Application Note – Considerations Using PE29100 Evaluation Board (EVB) with EPC8009 eGaN FETs

Peregrine’s PE29100 integrated high-speed driver is designed to control the gates of external power devices such as enhancement mode gallium nitride (eGaN®) field effect transistors (FETs). The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.

A new application note, Considerations Using PE29100 EVB with EPC8009 eGaN FETs (AN64), has been released by Peregrine and offers in-depth information on precautions that need to be observed when designing with the PE29100 driver.  These include bootstrap overcharging, minimum pulse width, false triggering effect caused by negative inductor current, maximum input operating voltage and operating frequency range. The application note is available as a technical resource under power management or by directly visiting the application note link