UltraCMOS® Digitally Tunable Capacitor

The PE64904 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi’s UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. The PE64904 offers high RF power handling and ruggedness, while meeting challenging harmonic and linearity requirements. This highly versatile product can be used in series or shunt configurations to support a wide variety of tuning circuit topologies. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required.

pSemi’s DuNE™ technology enables excellent linearity and exceptional harmonic performance. DuNE devices deliver performance superior to GaAs devices with the economy and integration of conventional CMOS.

PE64904 UltraCMOS® Digitally Tunable Capacitor

UltraCMOS® Digitally Tunable Capacitor

PE64904


The PE64904 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi's UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. The PE64904 offers high RF power handling and ruggedness, while meeting challenging harmonic and linearity requirements. This highly versatile product can be used in series or shunt configurations to support a wide variety of tuning circuit topologies. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required.

pSemi's DuNE™ technology enables excellent linearity and exceptional harmonic performance. DuNE devices deliver performance superior to GaAs devices with the economy and integration of conventional CMOS.

Industry-Leading Product

Specifications

Description5-bit; 32 states
Min Freq.100 MHz
Max Freq.3000 MHz
Peak RF Voltage (Vpk)30
Max Typ. Shunt Capacitance (pF)5.10
Min Typ. Shunt Capacitance (pF)1.10
Tuning Ratio4.6:1
Max Typ. Quality Factor @ Cmin35
Min Typ. Quality Factor @ Cmin10
InterfaceSPI
VDD Range (V)2.3–3.6
ESD HBM (V)1500
Package10L QFN
Package (mm)2x2

About Product

Key Features

      3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
      DuNE™-enhanced UltraCMOS® device
      5-bit 32-state digitally tunable capacitor
      Series configuration C = 0.60 - 4.60 pF (7.7:1 tuning ratio) in discrete 129 fF steps
      Shunt configuration C = 1.14 - 5.10 pF (4.6:1 tuning ratio) in discrete 129 fF steps
      High RF power handling (up to 38 dBm, 30 Vpk RF) and high linearity
      Wide power supply range (2.3 to 3.6V) and low current consumption (typ. 140 μA at 2.6V)
      Excellent 1.5 kV HBM ESD tolerance on all pins
      Packaging: 10-lead 2 × 2 × 0.45 mm QFN package

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