Gallium nitride (GaN) field-effect transistors (FETs) are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to MOSFETs, GaN FETs operate much faster and have higher switching speeds in the smallest possible volume. The promise of GaN is that it can dramatically reduce the size and weight of any power supply. However, these high-performance GaN transistors need an optimized gate driver to reach their performance potential.
An effective FET driver must charge and discharge gate capacitance as fast as possible, and it must have low propagation delay to allow fast signals. It also must avoid “shoot through” by not turning on high-side and low-side FETs at the same time.
UltraCMOS® GaN FET drivers deliver the industry’s fastest switching speeds, shortest propagation delays and lowest rise and fall times. Peregrine’s UltraCMOS technology platform is the driving force behind this industry-leading speed. By allowing higher speeds of operation over existing CMOS drivers, the technology empowers GaN transistors to achieve their performance and speed potential. Faster switching speed results in increased power densities in AC-DC converters and DC-DC converters, and leads to smaller filter sizes in class D audio amplifiers. Faster switching speed also enables innovation in new magnetics technologies, such as wireless charging and printed circuit board (PCB) coreless inductors and transformers. UltraCMOS GaN FET drivers provide switching transition speeds in the sub-nanosecond range and support hard switching applications up to 40 MHz.