Peregrine’s monolithic UltraCMOS® technology provides significant advantages over competing mixed-signal processes—such as gallium arsenide (GaAs), silicon germanium (SiGe), BiCMOS and bulk silicon CMOS—in applications where RF performance, low power and integration are paramount. Because UltraCMOS devices are fabricated in standard high-volume CMOS facilities, Peregrine's products benefit from the fundamental reliability, cost effectiveness, high yields, scalability and integration of CMOS, while achieving the peak performance levels traditionally delivered by technologies such as GaAs and SiGe.
UltraCMOS Technology vs. GaAs
GaAs-based multimode RF products tend to experience increased insertion loss and die size with linearity improvements. This is because the conventional circuits need multistacked field-effect transistors (FET) or multigate FETs and large gate width to achieve low distortion, which results in large parasitic off-capacitances with degraded insertion loss. UltraCMOS technology comprises a stack of FETs on a single SOI die, providing the ability to pass high power RF signals. Today, no GaAs-based products can achieve the IIP3, harmonics and ease of use of Peregrine’s UltraCMOS technology.
- GaAs requires positive and negative supplies. UltraCMOS technology integrates charge pumps.
- GaAs RF performance varies over supply voltage. UltraCMOS technology integrates bias generation, eliminating supply variation effects.
- GaAs is limited to the inherent ESD performance of the device. UltraCMOS technology integrates high-performance ESD protection.
- GaAs has virtually no digital capability or support for control interfaces. UltraCMOS technology integrates digital circuitry and control interfaces.