Peregrine’s combination of process architecture, circuit designs and device modeling has enabled an accelerated UltraCMOS® technology platform roadmap for RF applications. As opposed to simple scaling, significantly improving the basic Field Effect Transistor (FET) performance is achieved by reducing the on resistance of the channel, or improving the breakdown voltage, or the linearity, of the device. One performance metric for the FET is based on the product of the resistance from the “on” state and capacitance from the “off” state that provides an RF Figure of Merit (FOM) for the process technology, called RonCoff. With each new generation of the UltraCMOS technology platform, Peregrine targets a 20-percent improvement in RonCoff performance.
As shown in the figure, the RonCoff performance metric for UltraCMOS 10 technology is 113 fsec. This is a five-fold improvement over the first generation released by Peregrine ten years ago and is representative of Peregrine's expertise in using best-in-class engineering methodologies and materials to strike a balance between lowering insertion loss without sacrificing isolation performance.
Peregrine has demonstrated a path for advancing the UltraCMOS technology platform to meet market requirements. In 2009, Peregrine hit a major milestone for handset switch products when the UltraCMOS 5 technology beat the incumbent GaAs technology on virtually all RF performance metrics. At that point, RF SOI quickly became a widely accepted high-performance RF technology. It is now uncommon to find an antenna switch that utilizes GaAs. In 2013, Peregrine announced UltraCMOS 10 technology, a 130 nm technology platform that enables the company to deliver cost-competitive products for the mobile market. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design. In 2015, Peregrine introduced UltraCMOS 11 technology, the industry’s first RF SOI 300 mm technology platform. By moving to a 300 mm wafer, Peregrine opened the door to new enhancements and advanced features in future generations of the UltraCMOS technology platform.