Peregrine Semiconductor SPDT Switches Offer Design Flexibility to Address High-Performance RF Demands

High-Performance RF Demands Products ideally suited for Wireless Infrastructure, ISM and Broadband markets

San Diego, California, December 15, 2009 Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced the first pair in a series of new SPDT RF switches addressing the needs of wireless infrastructure, 2.4GHz Industrial, Scientific and Medical (ISM), and broadband applications for fiber optics and Multichannel Multipoint Distribution Service (MMDS). The PE4250 and PE4251 are the result of a joint design and development activity with long-standing partner OKI Electric Ltd. (Tokyo). Product engineers from both OKI and Peregrine collaborated to develop leading-edge design techniques to meet market demands, resulting in the latest high-performance UltraCMOS™ Silicon-on-Sapphire (SOS) RFICs.

The new PE4250 reflective and PE4251 absorptive 50-Ohm SPDT RF switches deliver best-in-class linearity and are pin- and logic-compatible, environmentally friendly alternatives to gallium-arsenide (GaAs)-based ICs. These HaRP™-enhanced devices, offered in the tiny RoHS-compliant 8-lead MSOP package, operate near DC through 3 GHz and deliver market-leading RF performance with P1dB of +30.5 dBm and IP3 (typ) of +59 dBm; and fast switching speed of 150 nS. The PE4250 and PE4251 utilize Peregrine’s HaRP™ Technology which eliminates gate and phase lag and results in fast settling time and no insertion loss drift. In addition, the devices have extremely low Insertion Loss (IL) of 0.55 to 0.75 dB typical from 10MHz to 3GHz; high Isolation across the operating range (51-40 dB for PE4250 and 62-43 dB for PE4251); and excellent ESD protection of 4000 V HBM. Flexible 3.3V or 5.0V dual supply voltage with 55/75 uA supply current, respectively, allows customers to select either supply voltage without sacrificing IIP3 linearity or degradation in P1dB performance. The new switches feature single-pin or complementary control inputs and no blocking capacitors are required.

The new devices are in volume production and are priced at $0.66/25Ku (PE4250) and $0.68/25Ku (PE4251).

About Environmentally-friendly UltraCMOS™ Technology

UltraCMOS mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high-performance wireless applications. Significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount. The Company’s revolutionary design inventions, such as HaRP™ technology which enables dramatic improvements in harmonic results, linearity and overall RF performance; and DuNE™ technology, the industry’s most advanced digital tuning capability, are paving the way for unprecedented RF IC development. More importantly, UltraCMOS- based RFICs offer an environmentally friendly option to arsenic-based GaAs ICs which have historically been widely used in RF and wireless systems. With the global move toward ‘green engineering’ and reduction of hazardous substances (RoHS), UltraCMOS SOS devices are poised to offer engineers and manufacturers alike a simple, responsible solution for the next-generation designs demanded by the environmentally conscious consumer.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and high-rel markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high- growth applications such as WCDMA, EDGE and GSM digital cellular and mobile TV; broadband communications such as DTV/PCTV/DVR; and in high-reliability applications such as telecom infrastructure, industrial, automotive, military and satellite systems. Peregrine UltraCMOS devices are manufactured under licensed foundry partnerships with world-class CMOS semiconductor manufacturers located in Japan, Taiwan, Korea and Australia. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at www.psemi.com.

###

The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

Markets

Power Management

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

Skip to content