Peregrine Semiconductor Unveils STeP8 UltraCMOS® Process Technology

Newest generation enables unmatched performance in RF Front End ICs

San Diego, California, Feb. 25, 2013 Peregrine Semiconductor Corporation (NASDAQ: PSMI), a fabless provider of high-performance radio frequency integrated circuits (RFICs), today announced from Mobile World Congress in Barcelona the latest version of UltraCMOS® process technology – Semiconductor Technology Platform 8 (STeP8). STeP8 technology shows a 36% improvement in RonCoff performance over STeP5 technology announced just one year ago—dramatically improving the linearity, insertion loss, and isolation capabilities of Peregrine’s RFIC products. Flagship devices utilizing the latest generation of the UltraCMOS technology include a HaRP™ enhanced RF switch and a highly integrated SP4T DuNE™ enhanced antenna-tuning switch, both of which are available for sampling. The initial STeP8-based SP16T RF switch demonstrates a nearly 40% shrink over the industry-leading footprint of the STeP-5-based counterpart.* The SP4T antenna-tuning switch has on-resistance of 1.5 Ohms, and insertion loss performance of 0.15 dB matched at 900 MHz—a 66% improvement over the previous offering from Peregrine.*

“As a fabless semiconductor company, our unique combination of process architecture, circuit designs, and device modeling has enabled an accelerated technology roadmap,” said Mark Miscione, vice president of RF Technology Solutions for Peregrine Semiconductor. “These results further validate Peregrine’s expertise in advanced RF silicon-on-insulator process development and its commitment to integration and high-performance at the RF Front End.”

The 4G LTE network has introduced significant challenges to the RF Front End of smart phones, including a fragmented RF spectrum, which causes co-existence issues between bands and other connectivity standards such as GPS, WiFi®, and Bluetooth®. The lack of global frequency alignment has resulted in more than 40 LTE bands now identified.

“Given the demanding RF conditions in which mobile devices must operate, demonstrating the ability to meet next generation requirements for high linearity, low loss and optimization is critical for success in the RF components market,” said Francis Sideco, senior principal analyst, consumer electronics and communications technologies at IHS. “Companies who are able to deliver innovation along those lines are strongly positioned to outpace their competitors.”

To ensure consistent, reliable operation within the LTE environment, mobile wireless device designers are required to incorporate high performance components into the RF Front End while maintaining a small form factor. Highly-integrated RF Front End modules such as those that UltraCMOS STeP8 enables address these demands by providing an ideal combination of high linearity and low insertion loss in a single, monolithically-integrated device.

“Peregrine continues to be the right choice when we look for RF innovation for the RF Front-End modules we deliver to our demanding global OEMs,” said Norio Nakajima, vice president of the communication business unit at MuRata Manufacturing Co., Ltd. “Their ability to engineer leading-edge technology like STeP8, and rapidly adjust to market dynamics, makes them our ideal partner.”

Peregrine is sampling the STeP8-based SP16T RF switch and SP4T antenna-tuning switch to select customers today; further interest should be directed to Peregrine’s global direct sales management.

About Peregrine Semiconductor

Peregrine Semiconductor (NASDAQ: PSMI) is a fabless provider of high-performance radio frequency integrated circuits (RFICs). Our solutions leverage our proprietary UltraCMOS® technology, an advanced RF Silicon-On-Insulator process. Our products deliver what we believe is an industry-leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. Additional information is available at https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks, and DuNE, and HaRP are trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.

*Based upon Peregrine Semiconductor-supplied data.

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Power Management

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

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