pSemi Announces High-linearity Sub-6 GHz RF Switches Reach Volume Production

SP4T Switches Deliver Industry-leading Performance for Hybrid Beamforming Systems

SAN DIEGO – January 31, 2023 – pSemi® Corporation, a Murata company focused on semiconductor integration, announces the production readiness of two new high-linearity switches targeted for the latest 5G wireless infrastructure and massive MIMO base station deployments.

By using the new high linearity switches in hybrid architecture topologies, base station designers can save valuable board space and improve thermal management, reducing the overall system’s cost, weight and power consumption. pSemi’s advanced SP4T switches deliver fast settling time plus best-in-class linearity, low insertion loss and superior power handling performance to improve spectral efficiency in sub-6 GHz active antenna systems.

5G base stations covering sub-6 GHz offer network providers an immediate path to wider bandwidths and increased data throughput. Newly licensed spectrum allocations in 3–5 GHz and 6.4–7.1 GHz, along with added antenna design complexities, create the need for new hybrid beamforming and phase-shifting topologies. Massive MIMO systems use hybrid architectures to minimize power-hungry digital processing and reduce the number of power amplifier components. These hybrid architectures offer the ideal balance of digital and analog, combining the flexibility of digital beamforming with the power efficiency and design simplicity at the analog RF front end (RFFE).

Two back-to-back pSemi SP4T switches with selectable phase shifts enable the analog beam control utilized in hybrid beamforming architectures. This phase shifter topology improves antenna beam steering and control in active antenna systems.

 

“Active antenna systems are driving a drastic increase in demand for RFFE components, along with tougher FR1 switching requirements for advanced 5G networks. As the industry leader in RF and mmWave switching, pSemi continues to push the boundaries of SOI technology and design RFIC solutions that empower base station OEMs and support the demands of 5G and beyond.”

Vikas Choudhary - Vice President, Sales & Marketing - Leadership

Vikas Choudhary

VP of sales and marketing

Features & Benefits

Covering a frequency range of 1.8 to 5 GHz, each UltraCMOS® PE42443 and PE42444 switch delivers industry-leading RF performance across the n41, n77, n78 and n79 bands. Available in two pin-to-pin compatible configurations, the PE42443 (negative and positive supply voltage) and the PE42444 (positive supply voltage only) are offered in 4 x 4 mm LGA packages.

  • Spectral efficiency — High linearity and high-power handling maximizes data throughput.
  • Energy conservation — Low insertion loss improves overall system efficiency.
  • Flexible beam management — Fast switching speed supports symbol-level analog beam adjustments to enable massive MIMO systems.

More Information

For more information on these high-linearity switches, contact the pSemi team.

About pSemi

pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission: to enhance Murata’s world-class capabilities with high-performance RF, analog and mixed-signal solutions. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare. From headquarters in San Diego and offices around the world, pSemi’s team explores new ways to make electronics for the connected world smaller, thinner, faster and better. To view pSemi’s semiconductor advancements or to join the pSemi team, visit www.psemi.com.

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The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries. All other trademarks are the property of their respective companies. The pSemi website is copyrighted by pSemi Corporation. All rights reserved.

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RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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