Peregrine Semiconductor introduces PE4257 RF Switch

Industry’s highest isolation, unparalleled linearity ideal for wireless infrastructure applications

San Diego, California, November 19, 2004 Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced the availability of the PE4257 UltraCMOS™ RF Switch for wireless infrastructure applications. The 50 ohm device demonstrates unrivaled isolation and broadband linearity performance, and offers the most economical, lowest power and smallest size solution for wireless infrastructure applications such as wireless base stations, repeaters and fixed wireless.

“The PE4257 is a perfect solution for wireless infrastructure manufacturers by offering unprecedented isolation and broadband linearity, as well as providing component count reduction,” said Jussi Salminen, director of Peregrine’s wireless sector marketing.  “The PE4257, along with its counterpart PE4256 for broadband applications, are being well received by the market with their industry leading isolation of 63 dB at 1 GHz operation and industry-leading IIP3 of greater than 55 dBm,” he added.

The PE4257 is a fully absorptive 50 ohm SPDT device featuring low insertion loss for lower power dissipation; and high ESD tolerance for simplified manufacturing. The device maintains unparalleled linearity over the entire frequency range and requires an extremely low bias while operating on a single 3-volt supply.

The PE4257 is available in the 4x4mm 20-lead QFN package and is priced at $0.84 ea. in 10K quantity orders.  Products samples and volume production are available now through Peregrine and its worldwide distribution partner, Richardson Electronics.

About UltraCMOS™ Technology

UltraCMOS™ mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology.  It is the first commercially qualified use of Ultra-Thin-Silicon (UTSi®) on sapphire substrates with high yields and competitive costs.  Significant performance advantages exist over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless, broadband cable communications, satellite and defense markets.  The Company, which recently moved its headquarters to a larger San Diego, California facility, maintains established design centers and operations in Chicago, IL; Aix-en- Provence, France; Sydney, Australia; and Tokyo, Japan. Additional information is available on the web at psemi.com. Contact Peregrine’s worldwide distribution partner, Richardson Electronics (NASDAQ: RELL), for sales information at 1-800-737-6937.

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The Peregrine Semiconductor name, logo and UTSi are registered trademarks and Ultra CMOS is a trademark of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Small form factor with robust ESD and reliability
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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
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    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
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    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
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