Peregrine Introduces UltraCMOS® RF Power Limiters, the Industry’s First Monolithic Alternative to Discrete, PIN-Diode Limiters

Peregrine’s New Architecture Delivers Turnkey, Power-Limiter Solutions That Outperform GaAs-Based Limiters in Protecting Systems From Excessive RF Power, Intentional Jammers and ESD Events

BEIJING – EDI CON – April 7, 2014 – In Booth #512 Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, debuts its new line of UltraCMOS® RF power limiters, including PE45140 and PE45450 slated for release in May. Peregrine’s power limiters represent the industry’s first turnkey, monolithic solutions to provide an alternative to discrete, PIN-diode limiters based on gallium arsenide (GaAs). UltraCMOS power limiters deliver simple, repeatable and reliable protection ideal for test-and-measurement, land-mobile-radio (LMR), wireless-infrastructure, military and radar systems.

“Peregrine makes best-in-class RF products, and we are pleased to extend that heritage into the new category of power limiters announced at EDI CON today,” says Duncan Pilgrim, director of marketing at Peregrine. “Our customers continuously find that incumbent GaAs- based RF solutions do not rise to the challenge of new complexity in the market, and they are investing in Peregrine’s SOI technology as fast as we can develop new options like this.”

Turnkey Monolithic Architecture Delivers Unprecedented Benefits

On a chip eight times smaller than the board space required by discrete, PIN-diode solutions, Peregrine’s new power limiters provide a 10-100X improvement in response and recovery time; and deliver greater than 40 dB improvement in linearity (IP3); offer a 20X improvement in ESD (electrostatic discharge) protection.

This diagram illustrates how Peregrine’s novel power-limiter architecture differs from GaAs alternatives:

Peregrine’s UltraCMOS® power limiter (right) replaces discrete GaAs PIN diode circuits (left) with a turnkey, monolithic solution that offers better performance in a smaller form factor.

Of particular interest to RF designers, Peregrine’s power limiters save PCB space with a small form factor; reduce BoM (bill of materials) by eliminating the need for extra components; and improve time to market by reducing in-design time and costs. They also beat existing solutions in RF performance, including higher linearity to eliminate signal distortion, high ESD to ensure high reliability, wide bandwidth to enable design flexibility and fast response and recovery times to ensure robust protection of power-sensitive components. Finally, because Peregrine’s power limiters are based on UltraCMOS instead of GaAs, they can be closely integrated with other UltraCMOS RF components.

This table illustrates how Peregrine’s new UltraCMOS power limiters compare to GaAs-based PIN diode solutions:

Several Industries Require Repeatable and Reliable Power Protection

Peregrine’s UltraCMOS power limiters can protect:

  • RF ports in test-and-measurement equipment
  • RF front ends and low-noise amplifiers (LNAs) in LMRs
  • RF receivers in wireless-infrastructure equipment
  • Tactical radio receivers from intentional jammers in military warfare
  • Transceiver (TRX) modules in radar systems

In order to achieve repeatable and reliable power protection, customers currently face challenges because it takes so long to design and validate PIN-diode power-limiter circuits and the multiple external components this architecture requires. With Peregrine’s new, all-in-one architecture, customers will be able to significantly reduce time to market and cost.

Availability

On display at EDI CON Booth #512, Peregrine plans to release the first two of its UltraCMOS power limiters in May 2014:

  • The PE45140 is a 20 MHz 2GHz, 50 W power limiter designed for professional  portable and mobile radios, such as tactical radios and LMRs, as well as HF, VHF, UHF, L-band radar transceivers.
  • The PE45450 is a 9KHz 6GHz, 50 W power limiter designed for test-and-measurement systems, L/S/C-band radar transceivers, counter-measure receivers and wireless receivers.

Both power limiters feature an adjustable limiting threshold, unbiased power limiting and operation in two modes – power limiting or power reflecting.

USE OF FORWARD-LOOKING STATEMENTS

This press release contains forward-looking statements regarding our management’s future expectations, beliefs, intentions, goals, strategies, plans and prospects. Such statements constitute “forward-looking” statements which are subject to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. The achievement of the matters covered by such forward-looking statements involves risks, uncertainties and assumptions. If any of these risks or uncertainties materialize or if any of the assumptions prove incorrect, our actual results, performance or achievements could be materially different from any future results, performance or achievements expressed or implied by the forward-looking statements. Such risks and uncertainties include, but are not limited to, our dependence on a limited number of customers for a substantial portion of our revenues; intellectual property risks; intense competition in our industry; our ability to develop and introduce new and enhanced products on a timely basis and achieve market acceptance of those products; consumer acceptance of our customers’ products that incorporate our solutions; our lack of long-term supply contracts and dependence on limited sources of supply; and potential decreases in average selling prices for our products.

For further information regarding risks and uncertainties associated with Peregrine’s business, please refer to the filings that we make with the Securities and Exchange Commission from time to time, including those set forth in the section entitled “Risk Factors” in our Form 10-K for the year ended December 29, 2012 and additional information that will be set forth in our Form 10-K that will be filed for the year ended December 28, 2013, which should be read in conjunction  with these financial results. These documents are available on the SEC Filings section of the Investor Relations section of our website at http://investors.psemi.com/. Please also note that forward-looking statements represent our management’s beliefs and assumptions only as of the date of this press release. Except as required by law, we assume no obligation to update these forward-looking statements publicly, or to update the reasons actual results could differ  materially from those anticipated in the forward-looking statements, even if new information, becomes available in the future.

ABOUT PEREGRINE SEMICONDUCTOR

Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and

monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test- and-measurement equipment and wireless infrastructure. Peregrine holds more than 170 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.

Markets

Power Management

Markets

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature
  • Power Management

    Capacitive switching technologies
    Low input/output ripple
    Low EMI performance
    High reliablity

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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