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PE42528

UltraCMOS+™ SPDT RF Switch- PE42528

      Ultra wide frequency: 9 kHz–30 GHz
      Low insertion loss:
      ▪ 1.3 dB @ 10 GHz
      ▪ 1.6 dB @ 30 GHz
      IP3: 47 dBm
      Power handling: 34 dBm peak
      High return loss: >18 dB across the band
      Fast switching time: 8 ns
      Package: 20-lead 3×3 mm LGA
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PE42448

UltraCMOS+™ SP4T RF Switch – PE42448

      Low insertion loss:
      ▪ 0.6 dB at 2.6 GHz typical
      ▪ 0.7 dB at 3.8 GHz typical
      High linearity IIP3: 88.5 dBm
      High power handling: 39.5 dBm RMS, 11 dBm PAR
      +115 °C operating temperature
      Packaging — 20-lead 4 x 4 mm LGA
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PE42020

UltraCMOS® True DC RF Switch

      High power handling
      Maximum voltage (DC or AC peak): ±10V on the RF ports
      Total harmonic distortion (THD): –84 dBc
      Configurable 50Ω absorptive or open reflective switch via a single pin (LZ)
      Packaging: 20-lead 4 × 4 mm QFN
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PE42420

UltraCMOS® SPDT RF Switch

      HaRP™ technology-enhanced
      High linearity
      High isolation
      Supports +1.8V control logic
      +105 °C operating temperature
      High ESD tolerance
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PE42423

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac support
      Wide supply range of 2.3V to 5.5V
      +1.8V control logic compatible
      Exceptional isolation
      High linearity across supply range
      High power handling
      Fast switching time of 500 ns
      High ESD tolerance
      Packaging: 16-lead 3 × 3 mm QFN
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PE42424

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband
      (UWB) support
      Exceptional isolation
      Fast switching
      High power handling
      High linearity across supply range
      1.8V control logic compatible
      105°C operating temperature
      High ESD tolerance
      Packaging: 6-lead 1.5 × 1.5 mm DFN
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PE4257

UltraCMOS® SPDT RF Switch

      50Ω characteristic impedance
      Integrated 50Ω 0.25 W terminations
      High input IP3 > +55 dBm
      High isolation 64 dB at 1000 MHz
      Low insertion loss: typically 0.75 dB at 1000 MHz and 0.95 dB at 2000 MHz
      LV CMOS two-pin control
      Single +3 V supply operation
      Low current consumption: 8 µA
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PE42422

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Wide supply range of 2.3–5.5 V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN
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PE42426

UltraCMOS® SPDT RF Switch

      Best-in-class linearity across frequency band
      Exceptional harmonics
      Low insertion loss and high isolation performance
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 × 0.75 mm QFN
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PE42427

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Low spurious performance of -163 dBm/Hz
      Wide supply range of 2.3-5.5V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN
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PE42722

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics performance
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      High ESD performance of 1.5 kV HBM
      Packaging – 32-lead 5 × 5 mm QFN
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PE42721

UltraCMOS® SPDT RF Switch

      HaRP™ technology enhanced
      Supports +1.8V control logic
      Low insertion loss
      High isolation
      ESD performance
      Packaging: 12-lead 3 × 3 mm QFN

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