Peregrine Semiconductor Wins Two ECN IMPACT Awards

The UltraCMOS® PE45450 RF Power Limiter and the UltraCMOS® 10 Technology Platform Are Recognized

SAN DIEGO – May 14, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces that the UltraCMOS PE45450 RF power limiter and the UltraCMOS 10 technology platform have won ECN IMPACT Awards. The PE45450 power limiter was recognized in the passive components and discrete semiconductors category, while the UltraCMOS 10 technology platform won in the material technology innovation category. In addition, Peregrine was named a finalist in two other categories. Winners were announced on Wednesday, May 13 at an awards ceremony at the Mirage Hotel in Las Vegas. The ECN IMPACT Awards recognize the products and services that had the greatest impact on the electronic components industry during 2014. 

“For more than 25 years, Peregrine has disrupted the market with game-changing technology, and we will continue to innovate with award-winning products and technology, like the PE45450 power limiter and the UltraCMOS 10 technology platform,” says Kinana Hussain, Peregrine’s director of marketing. “It is truly an honor to be recognized with two ECN IMPACT Awards.”

The UltraCMOS PE45450 is a 50-watt power limiter that delivers turnkey protection against excessive RF power and electrostatic discharge (ESD) events in land mobile radios, test and measurement (T&M) devices and wireless-infrastructure equipment. Poised to replace discrete, GaAs-based PIN-diode systems, the PE45450 provides robust and reliable protection in mission-critical situations—preserving the signal when it is needed most. The power limiter features a wide frequency range from 9 kHz to 6 GHz and a fast response-and-recovery time of less than 1 nanosecond.

The UltraCMOS 10 technology platform is the foundation for Peregrine’s next-generation RF switches, tuners and power amplifiers, including the industry’s first reconfigurable RF front end (RFFE), UltraCMOS Global 1. When compared to GaAs alternatives, UltraCMOS 10 technology delivers an over 50-percent performance improvement in insertion loss and isolation and supports a linearity of over 75 dBm at 900 MHz. It offers the industry’s best performance —113 fsec—as measured by RON COFF, a figure of merit RF engineers use to quantify the signal loss in an RF switch’s ON state and the signal leakage in the capacitor’s OFF state.


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Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit


The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.