Peregrine Semiconductor Reveals 60 GHz RF SOI Switches

The Industry’s First RF SOI Switches to Reach 60 GHz, the PE42525 and PE426525 Set a New Standard for RF SOI at High Frequencies

LONDON – EUROPEAN MICROWAVE WEEK – Oct. 4, 2016 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® PE42525 and PE426525, the industry’s first RF SOI switches to operate up to 60 GHz. These two switches set a new standard for RF SOI at microwave frequencies and significantly extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology. Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds. The PE42525 is ideal for test-and-measurement equipment, microwave-backhaul solutions and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range making it desirable for harsh-environment applications such as oil-and-gas exploration and other industrial markets.

Peregrine Semiconductor introduces the PE42525 and the PE426525, the industry’s first RF SOI switches to reach 60 GHz. “From 26.5 GHz to 40 GHz and now 60 GHz, Peregrine’s high frequency portfolio continues to reach frequencies and performance levels previously considered unattainable in RF SOI,” says Kinana Hussain, director of marketing at Peregrine Semiconductor. “The PE42525 and PE426525 are proof that RF SOI can deliver a high-performing, reliable and fast switching solution at microwave frequencies. As more applications demand higher frequency products, Peregrine will continue to break more barriers in RF SOI.”

The PE42525 and PE426525 join Peregrine’s high frequency product portfolio, which includes multiple switches, an image-reject mixer and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.

Features, Packaging, Price and Availability
Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver an incredibly fast switching speed of 8 nanoseconds and RF TRISE/TFALL time of 4 nanoseconds. Both switches have low power consumption of 450 nanoamperes. With exceptional performance across all key RF specifications, the switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and excellent ESD protection of 2 kV HBM. At 50 GHz, the PE42525 and PE426525 exhibit port-to-port isolation of 38 dB and insertion loss of 1.9 dB. The PE426525 has an extended temperature range that extends from -55 to +125 degrees Celsius.

The PE42525 and PE426525 are available as a flip-chip die with 500 microns bump pitch—the best form factor for high frequency performance as it eliminates performance variations due to wire-bond length.

Samples and evaluation kits are available now. For 1K-quantity orders, the PE42525 die is $40 each, and the PE426525 is $48 each.

ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine’s product portfolio is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 280 issued and pending patents and has shipped over 3.5 billion UltraCMOS units. For more information, visit https://psemi.com.

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The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries.  All other trademarks mentioned herein are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
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    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
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    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    High linearity performance for Wi-Fi 6 and W-Fi 6E
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    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
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    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
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    Fast response and recovery times for instantaneous protection and rapid return
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    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
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    Integrates dual-channel LNA with bypass function & high-power switch
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