PE4259 RF CMOS SPDT Switch Extends Performance To 3 GHz

Single Control Input, 2kV HBM ESD Ideal for Wireless Applications

San Diego, CALIFORNIA, March 31, 2004 Peregrine Semiconductor Corporation, a leading supplier of mixed-signal communications ICs, today introduced the world’s highest performance, general use RF CMOS SPDT switch. The new PE4259 extends performance to 3 GHz making it an optimal solution for any wireless application that can benefit from the advantages of RF CMOS.

The PE4259 RF switch provides many advances over competing technology including a single control input, high ESD tolerance (2 kV HBM), low insertion loss (0.3 dB, 1 GHz), high IP3 (60 dBm, 2 GHz) and isolation (32 dB, 1 GHz). The device is constructed using Peregrine’s patented UTSi® (Ultra- Thin-Silicon) silicon-on-sapphire technology which reduces up to five blocking capacitors and a control line compared to a similar GaAs device.

“The PE4259 enables customers to reduce part count, alleviate ESD concerns and simplify their design, inevitably leading to a higher performing, lower cost system” said Jim Cable, CEO of Peregrine Semiconductor. “Our early adopters confirm that the PE4259 makes their design work easier and shortens time to market. Several have since entered volume production.”

The PE4259 RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. An insertion loss of 0.3 dB at 1GHz and 0.45 at 2 GHz are typical.  Using a nominal +2.3-3.0 volt power supply, a typical input 1 dB compression point of +34 dBm can be achieved. Products samples, unit pricing and volume production available now through Peregrine and its worldwide distribution partner, Richardson Electronics.

About UTSi® CMOS Silicon-On-Sapphire (SOS) Technology

UTSi® CMOS is a proprietary, patented variation of silicon-on-insulator (SOI) technology. It is the first commercially qualified use of sapphire substrates with high yields and competitive costs. UTSi CMOS combines high-performance RF, mixed-signal, passive elements, nonvolatile memory and digital functions on a single device. Significant performance advantages exist over competing mixed-signal processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount. Additionally, because UTSi SOS is fabricated in standard high-volume CMOS facilities, Peregrine products benefit from the fundamental cost effectiveness and high yields, scalability and integration of CMOS, while achieving the performance of SiGe and GaAs. And since sapphire is a near perfect insulator, UTSi SOS products can integrate high-quality passive devices directly into the IC, offering unprecedented levels of RF integration and cost effectiveness.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-speed communications integrated circuits for the wireless, satellite and broadband cable communications markets. Using its patented Ultra-Thin-Silicon (UTSi) CMOS process,  Peregrine has developed a series of radio frequency IC products for high-growth applications, including CDMA and GSM digital cellular, and space and defense radiation hard ICs, and switching functions for video applications. Peregrine, headquartered in San Diego, California; maintains established design centers and operations in Chicago, IL; Aix-en-Provence, France; Sydney, Australia; and Tokyo, Japan. Additional information on Peregrine Semiconductor is available on its web site: www.peregrine- Contact Peregrine’s worldwide distribution partner, Richardson Electronics (NASDAQ: RELL), for sales information at 1-800-737-6937.


Peregrine Semiconductor is in no way affiliated with Peregrine Systems, a software company also based in San Diego, California.

The Peregrine Semiconductor name, logo and UTSi are registered trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.