Peregrine Semiconductor RF CMOS Switch Delivers Ultra-low Power

Tiny PE4283 reaches pinnacle with industry-leading feature combination

San Diego, California, June 20, 2005 Peregrine Semiconductor Corporation, a supplier of the industry’s most advanced RF CMOS and mixed-signal communications ICs, today announced the availability of the PE4283 SPDT reflective switch for developing “convergence” market and generic RF applications. Featuring ultra-low power consumption, high compression point and exceptional ESD tolerance, this new device offers a unique combination of versatile features, high- performance and competitive price for emerging applications in the WLAN, ISM, BT and other short range radio markets.

The PE4283 offers less than 1.0 dB of insertion loss from DC – 4 GHz, which is better than any other SOI based switch. Additionally, the extraordinary power handling and near-zero power consumption for battery-operated applications make the device an ideal pin diode replacement in applications  which  require  extremely  long  battery  life  and  reliable  connectivity.  The  PE4283 features 2kV ESD tolerance, the industry’s highest level for a SPDT switch, and isolation of 34 dB at 1GHz, exceptional for a switch packaged in the tiny 6-lead SC-70.  Additional features include P1dB compression point of +32 dBm; low insertion loss of 0.6 dB at 1GHz; and on-board CMOS control logic and integrated single-pin control inputs.

 “Our 50 Ohm broadband switch portfolio grows in step with the demands of the industry and the needs of our customers,” stated Jussi Salminen, director of wireless sector products for Peregrine. “The PE4283 broadband linearity performance is at the top of the list among some stiff competition. Its value cannot be matched,” he added.

The PE4283 is priced at $0.25 ea. (10K units) and is available in high-volume production by contacting Peregrine’s worldwide distribution partner, Richardson Electronics (

About UltraCMOS™ Technology

UltraCMOS™ mixed-signal process technology is a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. This technology delivers significant performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless infrastructure and mobile wireless; broadband communications; space, defense and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. Peregrine 0.25µm and 0.5µm UltraCMOS devices are manufactured in its 6” CMOS facility located in Sydney, Australia and in Hachioji, Japan through an alliance with OKI Electric Industry Co., Ltd. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web Contact Peregrine’s worldwide distribution partner, Richardson Electronics (NASDAQ: RELL), for sales information at 1-800-737-6937.


The Peregrine Semiconductor name, logo and UTSi are registered trademarks and UltraCMOS is a trademark of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.