First CMOS PA to Deliver GaAs-Level Performance for LTE Devices Is an Integral Part of the UltraCMOS Global 1 System, the Industry’s First Reconfigurable RF Front End
BARCELONA – MOBILE WORLD CONGRESS – Feb. 24, 2014 – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of being integrated onto a single chip with Peregrine’s Global 1 system, the first reconfigurable RF front end (RFFE). Only with an integrated, reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU handset design for global markets.
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Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test- and-measurement equipment and wireless infrastructure. Peregrine holds more than 170 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit http://www.psemi.com.
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