PE29100

PE29100

High-speed FET Driver

The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package. 

Technical Resources Contact RFPD

PE29100 Specs

Key Features


  • High- and low-side FET drivers
  • Dead-time control
  • Fast propagation delay, 8 ns
  • Tri-state enable mode
  • Sub-nanosecond rise and fall time
  • 2A/4A peak source, sink current

Specifications


Description

Configuration

Max Vin (V)

Frequency (MHz)

Rise Time (ns)

Fall Time (ns)

Propagation Delay (ns)

Min Output Pulse Width (ns)

Dead-time Control

Features

Package

Package (mm)

Gate Driver

Half Bridge

100V

33 MHz

1

1

8

10

Resistor Settable

Flip-chip

2 × 1.6 mm

Schematics


Pe29100 diagram

Videos


PE29100 High-speed GaN FET Driver
July 2016 | 4:07

Products displayed on this site are protected under one or more of the following U.S. Patents.

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