PE29101

PE29101

High-speed FET Driver

The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

To showcase the GaN-enabling capabilities of this driver, pSemi developed an evaluation kit with GaN Systems.

The GaN Systems GS61008P-EVBHF evaluation board allows the user to evaluate the PE29101 gate driver in a half-bridge configuration typically used in buck converters.

For more information on the GS61008P-EVBHF evaluation board, please visit GaN Systems’ website.

Technical Resources Local Sales

PE29101 Specs

Key Features


  • High- and Low-side FET drivers
  • Dead-time control
  • Fast propagation delay, 11ns
  • Internal gate overvoltage management
  • Sub-nanosecond rise and fall time
  • 2A/4A peak source/sink current
  • Package – Flip chip

Specifications


Description

Configuration

Max Vin (V)

Frequency (MHz)

Rise Time (ns)

Fall Time (ns)

Propagation Delay (ns)

Min Output Pulse Width (ns)

Dead-time Control

Features

Package

Package (mm)

Gate Driver

Half Bridge

6.5

40

1.0

1.0

11.0

2.0

Resistor Settable

Phase Control

Flip-chip

2.0x1.6

Schematics


Pe29101 diagram

Videos


PE29101 GaN FET Driver for LiDAR Applications
June 2018 | 1:26

Products displayed on this site are protected under one or more of the following U.S. Patents.

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