PE29102

PE29102

High-speed FET Driver

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as class D audio and wireless charging.

To showcase the GaN-enabling capabilities of this driver, our team developed evaluation kits with two leading GaN transistor providers—GaN Systems and EPC.

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PE29102 Specs

Key Features


  • High- and Low-side FET drivers
  • Dead-time control
  • Fast propagation delay, 9 ns
  • Tri-state enable mode
  • Sub-nanosecond rise and fall time
  • 2A/4A peak source/sink current 
  • Package – Flip chip

Specifications


Description

Configuration

Max Vin (V)

Frequency (MHz)

Rise Time (ns)

Fall Time (ns)

Propagation Delay (ns)

Min Output Pulse Width (ns)

Dead-time Control

Features

Package

Package (mm)

Gate Driver

Half Bridge

60V

40 MHz

0.9

0.9

9.1

5

Resistor Settable

Phase Control

Flip-chip

2 x 1.6 mm

Schematics


Diagram pe29102

Videos


PE29102 High-speed GaN FET Driver for Class-D Audio
October 2017 | 2:29

Products displayed on this site are protected under one or more of the following U.S. Patents.

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