Dual-channel Switch LNA Module

NEW
Dual-channel Switch LNA Module

PE53231

The PE53231 is a highly integrated front-end module targeted for wireless infrastructure applications such as TDD macro/micro base stations and MIMO applications. It is designed for use at the front end of a receiver chain for TDD-based systems and is ideally suited to 5G solutions or small cell applications. The dual-channel receiver integrates two independent LNAs with bypass function and a high-power switch. The PE53231 can be utilized across the 3.45 GHz–4.2 GHz frequency range with internal impedance matching networks. This receiver utilizes pSemi’s UltraCMOS® SOI technology which supports input RF power signal up to 20W average power, assuming 9 dB PAR and a very low noise figure, excellent linearity and very low power consumption. Each channel is controlled individually within the selected frequency band, which allows more flexibility in the system design.

Specifications

New ProductNEW
DescriptionSwitch LNA
Min Freq.3300 MHz
Max Freq.4200 MHz
Package (mm)6×6
Package40L LGA

Key Features

      Integrates dual-channel LNA with bypass function & high-power switch
      20W average RF input power
      Low noise figure of 0.9 dB
      37 dB gain at max gain mode
      32 dBm OIP3
      +105 °C operating temperature
      Packaging – 40-lead 6×6 mm LGA

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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