High-speed FET Driver

NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package.

High-speed FET Driver

PE29100


NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package.

Industry-Leading Product

Specifications

DescriptionGate Driver
Max Vin (V)100
Min Output Pulse Width (ns)10
Propagation Delay (ns)8
Dead-time ControlResistor Settable
Rise Time (ns)1
Fall Time (ns)1
PackageFlip-chip
Package (mm)2x1.6

About Product

Key Features

      High- and low-side FET drivers
      Dead-time control
      Fast propagation delay, 8 ns
      Tri-state enable mode
      Sub-nanosecond rise and fall time
      2A/4A peak source, sink current

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