High-speed FET Driver

NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

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High-speed FET Driver

PE29101


NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

Industry-Leading Product

Specifications

DescriptionGate Driver
Max Vin (V)6.5
Min Output Pulse Width (ns)2
Propagation Delay (ns)11
Dead-time ControlResistor Settable
Rise Time (ns)1
Fall Time (ns)1
PackageFlip-chip
Package (mm)2x1.6

About Product

Key Features

      High- and low-side FET drivers
      Dead-time control
      Fast propagation delay, 11ns
      Internal gate overvoltage management
      Sub-nanosecond rise and fall time
      2A/4A peak source/sink current
      Packaging: Flip chip

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