High-speed FET Driver

NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as Class D audio and wireless charging.

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High-speed FET Driver

PE29102


NOT RECOMMENDED FOR NEW DESIGNS (NRND)
This product is not recommended for new designs. For more information, please contact your local sales representative.

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as Class D audio and wireless charging.

Industry-Leading Product

Specifications

DescriptionGate Driver
Max Vin (V)60
Min Output Pulse Width (ns)5
Propagation Delay (ns)9.1
Dead-time ControlResistor Settable
Rise Time (ns)0.9
Fall Time (ns)0.9
PackageFlip-chip
Package (mm)2x1.6

About Product

Key Features

      High- and low-side FET drivers
      Dead-time control
      Fast propagation delay, 9 ns
      Tri-state enable mode
      Sub-nanosecond rise and fall time
      2A/4A peak source/sink current
      Packaging: Flip chip

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