The PE64102 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi’s UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. They also offer a linear capacitance change versus tuning state and excellent harmonic performance compared to varactor-based tunable solutions.

This highly versatile product can be mounted in series or shunt configurations and uses a 3-wire (SPI compatible) serial interface. It has a high ESD rating of 2 kV HBM on all ports making this the ultimate in integration and ruggedness. The DTC will be offered in a standard 12-lead 2.0 × 2.0 × 0.55 mm QFN commercial package.

pSemi’s DuNE™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS® process, providing performance superior to GaAs with the economy and integration of conventional CMOS.

Specifications

Description5-bit; 32 states
Min Freq.100 MHz
Max Freq.3000 MHz
Peak RF Voltage (Vpk)6
Max Typ. Shunt Capacitance (pF)14
Min Typ. Shunt Capacitance (pF)1.88
Tuning Ratio7.4:1
Max Typ. Quality Factor @ Cmin50
Min Typ. Quality Factor @ Cmin28
InterfaceSPI
VDD Range (V)2.3–3.6
ESD HBM (V)2000
Package12L QFN
Package (mm)2x2

Key Features

      3-wire (SPI compatible) 8-bit serial interface with built-in bias voltage generation and stand-by mode for reduced power consumption
      DuNE™-enhanced UltraCMOS® device
      5-bit 32-state digitally tunable capacitor
      C = 1.88 pF – 14.0 pF (7.4:1 tuning ratio) in discrete 391 fF steps
      RF power handing (up to 26 dBm, 6 VPK RF) and high linearity
      High quality factor
      Wide power supply range (2.3V to 3.6V) and low current consumption (typ. IDD = 30 µA @ 2.8V)
      Optimized for shunt configuration, but can also be used in series configuration
      Excellent 2 kV HBM ESD tolerance on all pins
      Packaging: 12-lead 2 × 2 × 0.55 mm QFN

Products displayed on this site are protected under one or more of the following U.S. Patents.

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