UltraCMOS® SPDT RF Switch

The PE423211 is a HaRP™ technology-enhanced reflective 50Ω SPDT RF switch designed for use in high-performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth® and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 × 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on pSemi’s UltraCMOS® process, a patented silicon-on-insulator (SOI) technology.

PE423211 UltraCMOS® SPDT RF Switch

UltraCMOS® SPDT RF Switch

PE423211


The PE423211 is a HaRP™ technology-enhanced reflective 50Ω SPDT RF switch designed for use in high-performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth® and UWB applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high-power handling, all in a compact 6-lead 1.6 × 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on pSemi’s UltraCMOS® process, a patented silicon-on-insulator (SOI) technology.

Industry-Leading Product

Specifications

DescriptionSPDT (R)
Min Freq.300 MHz
Max Freq.10.6 GHz
P1dB/P0.1dB (dBm)25.0 / –
Package6L DFN
Package (mm)1.6×1.6

About Product

Key Features

      AEC-Q100 Grade 2-qualified
      Broadband frequency support: 0.3 to 10.6 GHz
      Suitable for ISM band, Bluetooth®, 802.11 a/b/g/n/ac/ax and ultra-wideband (UWB)
      Low power consumption of 90 nA
      Low insertion loss
      High isolation
      P1dB = +25 dBm
      Operating temperature range: -40 to +105 °C
      ESD performance: 2000V HBM; 500V CDM
      Packaging: 6-lead 1.6 × 1.6 mm DFN

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