UltraCMOS® SP12T RF Switch

UltraCMOS® SP12T RF Switch

PE42412

The PE42412 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in wireless infrastructure and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports.

Specifications

DescriptionSP12T (A)
Min Freq.10 MHz
Max Freq.8 GHz
Max Typ. IL (dB)2.4
Min Typ. IL (dB)0.7
Max Typ. Iso (dB)69
Min Typ. Iso (dB)22
P1dB/P0.1dB (dBm)40.0 / 37.5
IIP3 (dBm)60
Max Power Rating (dBm)35
Max Temp (ºC)105
VDD Range (V)2.3–5.5
Switching Time.232 µs
ESD HBM (V)1000
Package (mm)5×5
Package32L QFN

Key Features

      High isolation: 39 dB @ 6 GHz
      Low insertion loss: 1.3 dB @ 6 GHz
      Fast switching time of 232 ns
      Power handling of 33 dBm CW
      Logic select (LS) pin provides maximum control logic flexibility
      Terminated all-off state mode
      Packaging – 32-lead 5 × 5 × 0.85 mm QFN

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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