UltraCMOS® SP4T RF Switch – PE42445

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UltraCMOS® SP4T RF Switch – PE42445

PE42445

The PE42445 is a HaRP™ technology-enhanced SP4T RF switch designed for use in 4G/5G wireless infrastructure and other high performance RF applications. It is comprised of four symmetric RF ports with very high isolation up to 8.5 GHz. The PE42445 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology. pSemi’s HaRP technology enhancements deliver high isolation, linearity and excellent harmonics performance.

Specifications

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DescriptionSP4T (A)
Min Freq.10 MHz
Max Freq.8.5 GHz
Max Typ. IL (dB)1
Min Typ. IL (dB)0.57
Max Typ. Iso (dB)72
Min Typ. Iso (dB)46
P1dB/P0.1dB (dBm)– / 37.0
IIP3 (dBm)65.5
Max Power Rating (dBm)34
Max Temp (ºC)125
VDD Range (V)2.3–5.5
Switching Time0.20 µs
ESD HBM (V)2000
Package (mm)3×3
Package20L LGA

Key Features

      Operating frequency: Up to 8.5 GHz
      High isolation: 62 dB @ 4 GHz
      Low insertion loss: 0.7 dB @ 4 GHz
      High linearity: 65 dBm IIP3 @ 3.8 GHz
      Fast switching time: 200 nsec
      -40°C to +125 °C operating temperature
      Packaging – 20-lead 3×3 mm LGA

Products displayed on this site are protected under one or more of the following U.S. Patents.

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Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

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RF Phase & Amplitude Control

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