MPAC–Doherty (1.8–2.2 GHz)

MPAC–Doherty (1.8–2.2 GHz)

PE46120

The PE46120 is a HaRP™ technology-enhanced monolithic phase and amplitude controller (MPAC)–Doherty device designed for precise phase and amplitude control of two independent RF paths. It optimizes system performance while reducing manufacturing costs of transmitters that use symmetric or asymmetric power amplifier designs to efficiently process signals with large peak-to-average ratios.

This monolithic RFIC integrates a 90° RF splitter, digital phase shifters and a digital step attenuator along with a low voltage CMOS serial interface. It can cover a phase range of 87.2° in 2.8° steps and an attenuation range of 7.5 dB in 0.5 dB steps, while providing excellent phase and amplitude accuracy from 1.8–2.2 GHz.

The PE46120 also features exceptional linearity, high output port-to-port isolation and extremely low power consumption relative to competing module solutions.

Specifications

X-MicrowaveYes
DescriptionMPAC-Doherty
Min Freq.1800 MHz
Max Freq.2200 MHz
Typ. IL (dB)6.9
P1dB/P0.1dB (dBm)-/35.0
IIP3 (dBm)60
Programming ModeSerial
DPS Range/Step (deg) / Bits87.2/2.8/5
DSA Range/Step (dB) / Bits7.5/0.5/4
VDD Range (V)2.3–5.5
IDD (mA)350
ESD HBM (V)1000
Package (mm)6x6
Package32L QFN

Key Features

      90° phase splitter
      5-bit digital phase shifter, 87.2° range, 2.8° resolution
      4-bit digital step attenuator, 7.5 dB range, 0.5 dB resolution
      High power handling and linearity
      Packaging: 32-lead 6 × 6 mm QFN

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

RF Switches

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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