UltraCMOS® RF Digital Step Attenuator

UltraCMOS® RF Digital Step Attenuator

PE43704

The PE43704 is a HaRP™ technology-enhanced, high linearity, 7-bit 50Ω RF digital step attenuator (DSA). It offers maximum power handling of 28 dBm up to 8 GHz and covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB, or 1.0 dB steps. The PE43704 is a pin-compatible version of PE43703. It provides multiple CMOS control interfaces and an optional VssEXT bypass mode to improve spurious performance. It maintains high attenuation accuracy over frequency and temperature and exhibits very low insertion loss and low power consumption. No blocking capacitors are required if DC voltage is not present on the RF ports.

Specifications

X-MicrowaveYes
Description7-bit; 128 states
Min Freq.9 kHz
Max Freq.8 GHz
Max Typ. IL (dB)2.9
Min Typ. IL (dB)1.3
IIP3 (dBm)61
Attn Range (dB)0.00–31.75
Attn Step (dB)0.25/0.5/1.0
InterfaceParallel (Latched, Direct), Serial, Serial Addressable
Bits7
Attenuation Accuracy (dB @ 1 GHz)+(0.15 + 4.5% of setting), –(0.1 + 2% of setting)
Switching Time1100 ns
ESD HBM (V)1500
Package (mm)5x5
Package32L QFN
PCN/EOL

PCN – July 23, 2018: Wafer Fabrication Process, Ordering codes change

Key Features

      HaRP™ technology-enhanced
      Safe attenuation state transitions
      Attenuation options: covers a 31.75 dB range in 0.25 dB, 0.5 dB, or 1.0 dB steps
      High power handling @ 8 GHz in 50Ω
      High linearity
      1.8V/3.3V control logic
      Programming modes: Direct parallel, latched parallel, serial and serial addressable
      High-attenuation state @ power-up (PUP)
      ESD performance

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

Markets

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    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Wide temperature range support from -55°C to +125°C
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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
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    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
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    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

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    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
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    +105°C operating temperature

Power Management

RF Mixers & Limiters

Front End Modules

RF Phase & Amplitude Control

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