UltraCMOS® Digitally Tunable Capacitor

PE64909 is a DuNE™ technology-enhanced digitally tunable capacitor (DTC) based on pSemi’s UltraCMOS® technology. This highly versatile product supports a wide variety of tuning circuit topologies with emphasis on impedance matching and aperture tuning applications. PE64909 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements enabled by pSemi’s HaRP™ technology. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required.

DuNE™ devices feature ease of use while delivering superior RF performance in the form of tuning accuracy, monotonicity, tuning ratio, power handling, size, and quality factor. With built-in bias voltage generation and ESD protection, DTC products provide a monolithically integrated tuning solution for demanding RF applications.

PE42722 - UltraCMOS® SPDT RF Switch

UltraCMOS® Digitally Tunable Capacitor

PE64909


PE64909 is a DuNE™ technology-enhanced digitally tunable capacitor (DTC) based on pSemi’s UltraCMOS® technology. This highly versatile product supports a wide variety of tuning circuit topologies with emphasis on impedance matching and aperture tuning applications. PE64909 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements enabled by pSemi’s HaRP™ technology. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required.

DuNE™ devices feature ease of use while delivering superior RF performance in the form of tuning accuracy, monotonicity, tuning ratio, power handling, size, and quality factor. With built-in bias voltage generation and ESD protection, DTC products provide a monolithically integrated tuning solution for demanding RF applications.

Industry-Leading Product

Specifications

Description4-bit; 16 states
Min Freq.100 MHz
Max Freq.3000 MHz
Max Typ. Shunt Capacitance (pF)2.35
Min Typ. Shunt Capacitance (pF)0.60
Tuning Ratio3.9:1
Max Typ. Quality Factor @ Cmin40
Min Typ. Quality Factor @ Cmin40
InterfaceSPI
Package10L QFN
Package (mm)2x2

About Product

Key Features

      3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
      DuNE™ technology-enhanced
      4-bit 16-state digitally tunable capacitor
      Shunt configuration C = 0.6 pF to 2.35 pF (3.9:1 tuning ratio) in discrete 117 fF steps
      High RF power handling (30 Vpk RF) and linearity
      Wide power supply range (2.3 to 4.8V) and low current consumption (typ. 140 μA at 2.75V)
      High ESD tolerance of 2kV HBM on all pins
      Packaging: 10-lead 2 × 2 × 0.55 mm QFN

Products displayed on this site are protected under one or more of the following U.S. Patents.