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UltraCMOS® SPDT RF Switch

UltraCMOS® SPDT RF Switch

PE42420

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The PE42420 is a HaRP™ technology-enhanced absorptive SPDT RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. It is ideal for transmit path switching, RF and IF signal routing, AGC loops, and filter bank switching applications.

This general purpose switch is comprised of two symmetric RF ports and has exceptional port to port isolation up to 6 GHz. An integrated CMOS decoder facilitates a two-pin low voltage CMOS control interface. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.

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Industry-Leading Product

Specifications

DescriptionSPDT (A)
Min Freq.20 MHz
Max Freq.6 GHz
Max Typ. IL (dB)1.6
Min Typ. IL (dB)0.95
Max Typ. Iso (dB)69
Min Typ. Iso (dB)50
P1dB/P0.1dB (dBm)33.0 / 28.0
IIP3 (dBm)65
Max Power Rating (dBm)23
Max Temp (ºC)125
VDD Range (V)2.7–5.5
Switching Time0.3 µs
ESD HBM (V)4000
Package (mm)4x4
Package20L LGA
PCN/EOL

PCN – February 18, 2022: Product Specification

PCN – May 18, 2020: Manufacturing Site, Product Specification, Ordering codes change

PCN – July 6, 2018: Assembly Site, Manufacturing Site, Ordering Code

PCN – July 15, 2016: Wafer Fabrication Process – Dual Source, Ordering Code

PCN – October 15, 2015: Assembly Process – New package laminate, Ordering Code

About Product

Key Features

      HaRP™ technology-enhanced
      High linearity
      High isolation
      Supports +1.8V control logic
      +105 °C operating temperature
      High ESD tolerance

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations
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Power Management

  • 5G antenna-integrated module (AiM) co-designed with Murata
  • High-efficiency 26 GHz, 28 GHz and 39 GHz beamforming front ends supporting bands n257, n258, n261 and n260
  • Advanced, highly integrated package and antenna technology
  • Modular AiM approach for building scalable antenna arrays
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Markets

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  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations

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    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Low Insertion Loss RF Switches

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    Best-in-class ESD and reliability

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    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

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    20W average RF input power
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Power Management

  • Unique, patented architecture to enable higher overall system, power conversion efficiency
  • Fully integrated solutions from 15W to 160W
  • Virtually lossless (up to 99% peak) conversion and soft-switching topology
  • Parallel operation to higher power levels
  • Available through our parent company Murata
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Front End Modules

  • Industry-leading monolithic Wi-Fi RF front-end solutions
  • High linearity performance for Wi-Fi 6 and W-Fi 6E
  • Compact form factors integrating high-performance RF, analog and digital
  • Best-in-class ESD and reliability
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RF Phase & Amplitude Control

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  • Monolithic CMOS solution that integrates RF, analog and digital
  • Digital control interface with parallel and serial programming options
  • Best-in-class ESD and reliability
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RF Attenuators

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  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability
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RF Switches

  • Industry-leading RF performance
  • HaRP™ technology enhancement
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Best-in-class ESD and reliability
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