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RF Attenuators

pSemi  /  RF Attenuators

RF Attenuators

Key Features

  • High linearity, fast switching time with wide bandwidth
  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability

RF Product Catalog

View the pSemi 2023–2024 Product Catalog to see our complete RF product portfolio.

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Glitchless RF Digital Step Attenuators

Product Store Datasheet Description Freq. Typ. IL (dB) IIP3 (dBm) Attn Range (dB) Attn Step (dB) Interface Bits Package Package (mm) Attenuation Accuracy (dB @ 1 GHz) Switching Time ESD HBM (V)
Min Max Min Max
PE43711 7-bit; 128 states 9 kHz 6 GHz 1.30 2.40 57 0.00–31.75 0.25/0.5/1.0 Parallel (Latched, Direct), Serial 7 24L QFN 4x4 ±(0.15 + 1.5% of setting) 275 µs 3000
PE43712 7-bit; 128 states 9 kHz 6 GHz 1.30 2.45 57 0.00–31.75 0.25/0.5/1.0 Parallel (Latched, Direct) 7 32L QFN 5x5 ±(0.20 + 1.5% of setting) 275 µs 3000
PE43713 7-bit; 128 states 9 kHz 6 GHz 1.30 2.45 57 0.00–31.75 0.25/0.5/1.0 Parallel (Latched, Direct) 7 32L QFN 5x5 ±(0.20 + 1.5% of setting) 275 µs 3000

75Ω Wired Broadband RF Digital Step Attenuators

Product Store Datasheet Description Freq. Typ. IL (dB) IIP3 (dBm) Attn Range (dB) Attn Step (dB) Interface Bits Package Package (mm) Attenuation Accuracy (dB @ 1 GHz) Switching Time ESD HBM (V)
Min Max Min Max
PE4314 6-bit; 64 states 1 MHz 2500 MHz 1.00 1.50 58 0.00–31.50 0.5 Parallel 6 20L QFN 4x4 ±(0.15 + 3% of setting) 370 µs 1500
PE43665 6-bit; 64 states 1 MHz 2000 MHz 1.40 1.80 52 0.00–31.50 0.5 Parallel (Latched, Direct) 6 20L QFN 4x4 ±(0.15 + 4% of setting) 1 µs 500

General-purpose RF Digital Step Attenuators

Product Store Datasheet Description Freq. Typ. IL (dB) IIP3 (dBm) Attn Range (dB) Attn Step (dB) Interface Bits Package Package (mm) Attenuation Accuracy (dB @ 1 GHz) Switching Time ESD HBM (V)
Min Max Min Max
PE4312 6-bit; 64 states 1 MHz 4000 MHz 1.30 2.10 59 0–31.50 0.5 Parallel (Latched, Direct), Serial 6 20L QFN 4x4 ±(0.15 + 2% of setting) 0.5 µs 1500
PE43205 2-bit; 4 states 35 MHz 6 GHz 0.50 1.05 61 0.00–18.00 6.0 Parallel 2 12L QFN 3x3 +0.10 0.031 µs 2000
PE43508 6-bit; 64 states 9 kHz 55 GHz 2.20 5.90 50 0.00–31.50 0.5/1.0 Parallel (Latched, Direct), Serial, Serial Addressable 6 Flip Chip ₋ +(1.00+4.5% of setting) / -1 0.330 µs 1000
PE43610 6-bit; 64 states 9 kHz 13 GHz 1.60 3.00 50 0.00–31.50 0.5/1.0 Parallel (Latched, Direct), Serial, Serial Addressable 6 24L LGA 4x4 +(1.00+4.5% of setting) / -1 0.330 µs 1000
PE43614 6-bit; 64 states 9 kHz 45 GHz 3.00 5.80 50 0.00–31.50 0.5/1.0 Parallel (Latched, Direct), Serial, Serial Addressable 6 24L LGA 4x4 +(1.00+4.5% of setting) / -1 0.330 µs 1000
PE43620 2-bit; 4 states 50 MHz 3000 MHz 0.60 0.70 61 0–18.0 6/12/18 Parallel 2 12L QFN 3x3 ±(–0.25/+0.40 of setting) 0.03 µs 2000
PE43650 5-bit; 32 states 9 kHz 6 GHz 2.40 2.40 58 0.00–15.50 0.5 Parallel (Latched, Direct), Serial 5 24L QFN 4x4 ₋ ₋ ₋
PE43670 7-bit; 128 states 9 kHz 4000 MHz 1.90 2.40 59 0–31.75 0.25 Parallel (Latched, Direct), Serial Addressable 7 32L QFN 5x5 ±(0.2/+0.15 of setting) 4 µs 500
PE43704 7-bit; 128 states 9 kHz 8 GHz 1.30 2.90 61 0.00–31.75 0.25/0.5/1.0 Parallel (Latched, Direct), Serial, Serial Addressable 7 32L QFN 5x5 +(0.15 + 4.5% of setting), –(0.1 + 2% of setting) 1.1 µs 1500
PE43705 7-bit; 128 states 50 MHz 8 GHz 1.30 2.40 58 0.00–31.75 0.25/0.5/1.0 Parallel (Latched, Direct), Serial, Serial Addressable 7 32L QFN 5x5 +(0.15 + 1.5% of setting), –(0.1 + 1% of setting) 1 µs 1500