The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee® applications as well as Bluetooth® (including Bluetooth Low Energy). The PE562212 is also capable of low-to-medium Wi-Fi® throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-on insulator (SOI) technology.
The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee® applications as well as Bluetooth® (including Bluetooth Low Energy). The PE562212 is also capable of low-to-medium Wi-Fi® throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-on insulator (SOI) technology.
| Description | 2.4 GHz SOI IoT FEM |
| Min Freq. | 2400 MHz |
| Max Freq. | 2483.5 MHz |
| P1dB/P0.1dB (dBm) | 21.0 / – |
| Attn Range (dB) | 0–15 |
| Attn Step (dB) | 1 |
| Typ. Tx Gain (dB) | 23 |
| Typ. Rx Gain (dB) | 15 |
| VDD Range (V) | 3.0–3.6 |
| Package | 14L LGA |
| Package (mm) | 1.8×1.8×0.7 |
| Operating Frequency (GHz) | 2.4 |
| Tx Gain Control | 15 |
| Tx Gain Step (dB) | 1 |
| Rx NF (dB) | 1.6 |
| Bypass Loss (dB) | -0.6 |
| Supply Voltage (V) | 3.0–3.6 |
| PSAT (dBm) | 24 |
Products displayed on this site are protected under one or more of the following U.S. Patents.